Thermal stability

Fig. 7: As deposited Mo/Si multilayer with 0.5nm B₄C on both interfaces.

Fig. 8: Mo/Si multilayer with 0.5nm B₄C on both interfaces after annealing at 400°C for 20min.

-> Significant improvement of the thermal stability: Up to typically 170°C no period thickness contraction is observable in Mo/Si multilayers with B₄C barrier layers.
Increase of thermal stability corresponds to an increase of long-term stability.