Multilayer preparation
The DC magnetron sputter deposition technique is used to prepare nm
multilayers. A scheme of the target-substrat arrangement is shown in
fig. 1. The setup is characterized by the following properties:
- UHV chamber with 4 rectangular magnetron sputter sources
- Base pressure: <2x10-8mbar
- Sputtering gas: Ar, stable deposition conditions at
pAr>
7·10-4mbar
- Target-substrate distance: 50-100mm
- Maximum substrate size: 150mm diameter
- Substrate rotation:
wR=0.0024-5 rpm
- Substrate spin:
wS=235rpm
- Typical deposition time: 1 period per min
Fig. 1: Principle of thin film depostition by magnetron
sputter technique. The substrates are faced downwards.